| PART |
Description |
Maker |
| DXT5551P5-1011 DXT5551P5-15 |
160V NPN HIGH VOLTAGE TRANSISTOR
160V NPN HIGH VOLTAGE TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| ZXTN5551GTA ZXTN5551GTC ZXTN5551G |
160V, SOT223, NPN high voltage transistor
|
Diodes Incorporated
Zetex Semiconductors
|
| FMMT497 |
SOT23 NPN silicon planar high voltage high
|
Diodes Incorporated
|
| FMMTA42-15 |
300V NPN HIGH VOLTAGE TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| FMMT459QTA |
500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23
|
Diodes
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| PZTA42T1 PZTA42T1_D |
SOT23 PACKAGE NPN SILICON
NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
ONSEMI[ON Semiconductor]
|
| ENN779D |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
|
Sanyo Semicon Device
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| FMMT459Q-15 |
500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| 2N4347 2N3442 |
High voltage silicon N-P-N transistor. 140V, 100W.
High voltage silicon N-P-N transistor. 160V, 117W.
|
General Electric Solid State
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
